Brad R. Conrad (CV)

Email bradrconrad --at-- gmail --dot-- com
Born Aug 02, 1982

B.S. Physics (2004), Rochester Institute of Technology, Rochester, Ny
M.S. Physics (2006), University of Maryland, College Park, Md
Ph.D Physics (2009), University of Maryland, College Park, Md

Current Status NRC Postdoctoral Fellow at NIST
Advisor E.D Williams (Physics)
Professional Interests Nanoelectronics, Surface Science, Organic Electronics, Scanning Probe Microscopy, Noise/Fluctuations, Solar Cells, Device Physics, Biophysics
Current Projects

My research currently is focused on the electronic transport, film nucleation/growth mechanisms, and the applications of organic compounds such as Pentacene or other interesting compounds/mixtures. In relation TFT's, these interests have led me to study how defects, impurities, and physical limitations to the conduction channel change electronic transport in Pn thin films. These investigations have more recently led me to STM studies of Pn and Pn/C60 in TFT environments. The knowledge I have gained in studying transport limitations and nucleation/growth from an atomic resolution perspective will greatly assist me in future studies aimed at identifying and exploring systems with enhanced electronic transport characteristics or other novel properties. In general, I'm very interested in the relationships between electronic transport, surfaces, defects, impurities, and growth mechanisms. I am also interested in Solar cells, OLED's, Fuel Cells, and many other device related systems.


Spatial first-passage statistics of Al/Si(111)-(sqrt(3)×sqrt(3)) step fluctuations
B. R. Conrad, W. G. Cullen, D. B. Dougherty, I. Lyubinetsky, and E. D. Williams
Phys. Rev. E 75, 021603 (2007) doi:10.1103/PhysRevE.75.021603

Percolative effects on noise in pentacene transistor
B. R. Conrad, W. G. Cullen, W. Yan, and E. D. Williams
Appl. Phys. Lett. 91, 242110 (2007) doi:10.1063/1.2823577

Effect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors
Elba Gomar-Nadal, Brad R. Conrad, William G. Cullen, Ellen D. Willams
J. Phys. Chem. C. 112(14); 5646-5650 (2008) doi:10.1021/jp711622z

Effect of impurities on pentacene island nucleation
Brad R. Conrad, Elba Gomar-Nadal, William G. Cullen, A. Pimpinelli, T.L. Einstein, Ellen D. Willams
Phys. Rev. B 77, 205328 (2008) doi:10.1103/PhysRevB.77.205328

Pentacene islands grown on ultra-thin SiO2
Brad R. Conrad, William G. Cullen, Blake C. Riddick, Ellen D. Willams
Surface Science Letters 603(3); L27-L30 (2009) doi:10.1016/j.susc.2008.12.020

Surface roughness of ultra-thin and comerical SiO2
Tracy Moore, Brad R. Conrad, Blake C. Riddick, Ellen D. Willams

Interface Studies of C60 and Pentacene
B. R. Conrad, T. Bonnen,G. Dutton, D. B. Dougherty, W. Jin, W. G. Cullen, E.D. Willams, J. E. Reutt-Robey, S. Robey